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Fatigue phenomenon of energy storage film

The polarization hysteresis loops and the dynamics of domain switching in ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT), antiferroelectric PbZrO3 (PZ) and relaxor-ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZ.
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Antiferroelectric domain modulation enhancing energy storage

Ultimately, a recoverable energy density of 38.3 J/cm 3 and an energy storage efficiency of about 89.4% can be realized at 1.5% tensile strain and 2% defect dipole concentration. Our work provides a new idea for the preparation of antiferroelectric thin films with high energy storage density and efficiency by domain engineering modulation.

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Improvement of energy storage performance in PbZr

PbZrO 3 (PZ) thin films as typical anti-ferroelectric materials have been widely explored by researchers [2, 11, 12].Qiao et al. discovered that La-doped PZ anti-ferroelectric thin films obtained the high energy storage density of 34.9 J/cm 3 and the energy storage efficiency of 59.2% at 800 kV/cm [13] teresting, it was found that the energy storage density of about 16

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Enhanced energy storage properties and temperature stability of fatigue

Electrostatic energy-storage capacitors, with their ultrahigh storage density and high temperature stability, have been receiving increasing attention of late for their ability to meet the critical requirements of pulsed power devices in low-consumption systems. In such a context, this work reports on the successful production of anti-ferroelectric (AFE) thin films with

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Impact of fatigue behavior on energy storage performance in

DOI: 10.1016/j.jeurceramsoc.2020.01.049 Corpus ID: 213556174; Impact of fatigue behavior on energy storage performance in dielectric thin-film capacitors @article{Nguyen2020ImpactOF, title={Impact of fatigue behavior on energy storage performance in dielectric thin-film capacitors}, author={Minh Duc Nguyen}, journal={Journal of The European Ceramic Society}, year={2020},

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Mechanism of Fatigue in Micron-Scale Films of

polycrystalline silicon films display failure stresses of approximately half their (single-cycle) fracture strength after fatigue lives in excess of ~1011 cycles. Although static fatigue of the native silica layer has been suggested (6), until now the mechanism of fatigue in silicon thin films has essentially remained a mystery.

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Energy storage performances of La doping BaBi4Ti4O15 thin films

In addition, from 20 to 140 °C, no significant changes were observed in energy storage density and efficiency, and the energy storage performance did not decrease significantly after 1.6 × 10 8 charge–discharge cycles, indicating that the film has excellent thermal stability and fatigue resistance. These results not only show that the BBT

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Fatigue‐Free and Bending‐Endurable Flexible Mn

Fatigue‐Free and Bending‐Endurable Flexible Mn‐Doped Na 0.5 Bi 0.5 TiO 3 ‐BaTiO 3 ‐BiFeO 3 Film Capacitor with an Ultrahigh Energy Storage Performance May 2019 Advanced Energy Materials

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Energy storage and multiferroic properties of La-doped epitaxial

In particular, the LBFO thin films tended to increase energy storage efficiency as the concentration of La increased, Regarding the fatigue phenomenon, a decrease in recoverable energy density due to a slight decrease in saturation polarization and remanent polarization was observed after 10 7 cycles. Finally, a decrease in the recoverable

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The influence of A/B-sites doping on antiferroelectricity of PZO energy

A/B-site doping in influencing the antiferroelectricity of PZO has a similar effect in only considering t value, and A-site doping would be better than B-site one in energy storage properties. PBZ films achieve a high W rec of 26.4 J/cm 3 with a η of 56.2 % under an applied electric field of 1278 kV/cm, accompanying a suitable temperature and

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Advancing Energy‐Storage Performance in Freestanding

The collective impact of two strategies on energy storage performance. a–d) Recoverable energy storage density W rec and energy efficiency η for 5 nm thin films of BTO, BFO, KNN, and PZT under various defect dipole densities and different in-plane bending strains (Different colored lines represent in-plane bending strains ranging from 0% to 5%).

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Low electric-field-induced strain and high energy storage

In addition to energy storage density (W rec) and energy efficiency (ƞ), electrical fatigue characteristic is also an important factor affecting the performance of anti-ferroelectric (AFE) capacitors.The main impacts of electrical fatigue characteristic are strain and thermal shock. The AFE ceramic materials will undergo AFE-FE phase transition, when the applied

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Fatigue-less relaxor ferroelectric thin films with high energy storage

2 Mn thin film exhibits strong fatigue endurance behavior after 10 8 cycles. which has the similar phenomenon in Nb-doped BiFeO 3 and Mn-doped BiFeO 3 thin films [46, 47]. More carriers are stimulated and new conduction mechanism arises when electric field increases. the inset shows breakdown strength of xMn thin films. (c) Energy

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Imprint effect on energy storage performance of Aurivillius

The energy storage efficiency increases from 56.8% to 74.1%, while a high energy density of ∼20 J/cm3 is maintained under an electric field of 1200 kV/cm. Additionally, the operating frequencies

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Generative learning facilitated discovery of high-entropy ceramic

In order to better evaluate the energy storage properties of C-n films, the C-3 film exhibits nice fatigue durability of at least 1 × 10 5 cycles with U e ~ 33.36 J cm −3 and

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Low leakage current, enhanced energy storage, and fatigue

The Mn-doped PLZT AD thick films exhibit high dielectric breakdown strength (DBS) of ~ 5420 kV/cm, energy-storage density (ESD) of ~ 38.7 W/cm3, with high energy efficiency of ~ 71%. Additionally, the Mn-doped PLZT AD thick films demonstrate a low leakage current and excellent fatigue properties, as indicated by the obtained polarization, DBS

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Enhanced energy storage properties in PbZrO3 thin films via the

For the composite films prepared using the NiO precursor solution with 0.05 mol/L, the recoverable energy storage density of the NiO-PZO composite film is up to 19.6 J/cm 3 under the electric field of 1038 kV/cm, which is 30% higher than that of the pure PZO film under the same conditions. Also, the energy storage efficiency of the composite

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High energy storage performance in lead-free BiFeO3-BaTiO3

We measured the ferroelectric hysteresis, dielectric properties and the fatigue performance of the BFBT thin film with thickness of about 200 nm. It was found that the film

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BiFeO3-SrTiO3 thin film as new lead-free relaxor-ferroelectric

A clear relaxation phenomenon is observed that agrees well with the reported Moreover, the multilayer films show almost fatigue-free energy-storage performance after 1010 switching cycles

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Review of lead-free Bi-based dielectric ceramics for energy-storage

The energy-storage performance of dielectric capacitors is directly related to their dielectric constant and breakdown strength [].For nonlinear dielectric materials, the polarization P increases to a maximum polarization P max during charging. Different materials have different P max, and a large P max is necessary for high-density energy storage. During

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Impact of fatigue behavior on energy storage performance in

Compared with films annealed at 750 °C, the recoverable energy-storage density and energy efficiency in 650 °C annealing samples increased by 50% and 100%, respectively.

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Polarization Fatigue in Ferroelectric Thin Films and

Recently, film capacitors have achieved excellent energy storage performance through a variety of methods and the preparation of multilayer films has become the main way to improve its energy

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Medium-entropy relaxor ferroelectric (Bi0.7Na0.67Li0.03)0

Relaxor ferroelectric capacitors receive extensive attention for the energy storage applications due to their slim polarization–electric field hysteresis loops. Typically, relaxor ferroelectrics can be designed through introducing multiple heterovalent cations in the ferroelectrics to break the long-range ferroelectric order and form polar nanoregion. Here,

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Intrinsic Self-Healing Chemistry for Next-Generation Flexible Energy

The booming wearable/portable electronic devices industry has stimulated the progress of supporting flexible energy storage devices. Excellent performance of flexible devices not only requires the component units of each device to maintain the original performance under external forces, but also demands the overall device to be flexible in response to external

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Fatigue-free dielectric capacitor with giant energy density based

Lead-free inorganic dielectric film capacitors have ignited plenty of interest in developing the dielectric energy storage. Here, we obtained a 0.5 mol% Ce and 2 mol% Mn-codoped 0.94Na0.5Bi0.5TiO3–0.06BaTiO3 [(Ce,Mn):NBT–BT] ceramic film capacitor on Pt/TiO2/SiO2/Si substrate, which has a significantly improved recoverable energy storage

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Unique Ferroelectric Fatigue Behavior and Exceptional High

Fatigue and retention loss are largely unreported in nitride wurtzite ferroelectrics. Therefore, this paper discusses the mechanisms for polarization loss due both to bipolar cycling of the

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Polarization Fatigue in Ferroelectric Films: Basic Experimental

With the decreasing size of storage devices, the problem of ferroelectric fatigue has become increasingly prominent [17][18][19]. Reducing ferroelectric fatigue can greatly extend the lifespan of

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Ultrahigh Energy Storage Performance of Flexible BMT‐Based

In addition, the flexible ferroelectric film capacitor also exhibits good thermal stability (25–200 °C), high frequency reliability (500 Hz–10 kHz), excellent electrical (10 8

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Superior energy storage performance, and fatigue resistance in

Oxygen processed BCZT thin films showed energy storage density (ESD) of 64.8 J/cm3 and energy storage efficiency (ESF) of 73% at 2000 kV/cm. Apart from that, the films showed very low leakage

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Enhanced energy storage performance and fatigue resistance

The validity of Mn element on enhanced energy storage performance and fatigue resistance of Mn‐doped 0.7Na0.5Bi0.5TiO3–0.3Sr0.7Bi0.2TiO3 lead‐free ferroelectric ceramics (BNT–BST–xMn) is certified by doping. The effects of Mn modification on the dielectric behavior, ferroelectric, energy storage properties, and AC impedance are comprehensively investigated.

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Flexible lead-free Na0.5Bi0.5TiO3-based film capacitor with stable

The important application potential of flexible energy storage materials in new portable and wearable electronic devices has aroused a research upsurge in performance optimization. Here, the flexible (1−x)Na0.5Bi0.5TiO3−xBi(Mg0.5Zr0.5)O3 (NBT-xBMZ) film capacitors were obtained via a simple sol–gel method based on a nickel foil substrate. The

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About Fatigue phenomenon of energy storage film

About Fatigue phenomenon of energy storage film

The polarization hysteresis loops and the dynamics of domain switching in ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT), antiferroelectric PbZrO3 (PZ) and relaxor-ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZ.

Fatigue in a ferroelectric (FE) material is normally defined as the progressive shrinkage of it.

2.1. Fabrication of (111)Pt/Ti/SiO2/Si (Pt/Si) substratesTo prepare the Pt/Si substrates, a 15-nm-thick Ti adhesive layer, and a 100-nm-thick Pt bottom electro.

The crystallinity and microstructure of the PZT, PZ and PLZT thin films grown on Pt/Si substrates are indicated in Figs. S1 and S2. The x-ray diffraction (XRD) patterns in Figs. S1a-c show that t.

Although there are a number of models under discussion, the fatigue phenomenon in ferroelectric oxides is a complicated process and is still not completely understood. Mor.

In summary, we have simultaneously investigated the fatigue behavior and domain structure caused by different bipolar electric fields for FE PZT, AFE PZ, and RFE PLZT thin fil.

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