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Nondispersive Infrared Gas Sensor Using InSb-Based

InSb-Based Photovoltaic-Type Infrared Sensor Edson Gomes Camargo*, Seiichi Tokuo, Hiromasa Goto and Naohiro Kuze R&D Center, Asahi Kasei Microdevices Corporation IR1011 is a very small uncooled InSb photodiode-based IR detector capable of detecting the far-infrared range, with competitive price and performance, when compared

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Thermal models for laser damage in InSb photovoltaic and

Commercial InSb photovoltaic (PV) detectors are usually fabricated as a thin ( % 2 ^m) p-type layer on a relatively thick slab of M-type material. The cross section of a typical InSb P V detector is sketched in Fig. l(a). The InSb crystal of thickness a is soldered onto a Kovar header of thickness c. The Kovar may be in direct thermal contact

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InSb MOS INFRARED DETECTOR | Applied Physics Letters

Infrared photovoltaic response and high quantum efficiency have been observed in a large‐area InSb, metal‐oxide‐semiconductor structure. Spectral measurements indicate that the response is due to the generation of electron‐hole pairs in a depletion region of the n‐type InSb at the InSb‐oxide interface. Pulsed current measurements

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InSb working standard radiometers

The liquid-nitrogen-cooled InSb photovoltaic detectors (4 mm diameter) were set 1 mm behind a 3.5 mm diameter aperture. The geometry of a long-snout InSb detector Dewar is shown in Figure 1. A second aperture situated about 50 mm from the

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Infrared Detectors Overview in the Short Wave Infrared to

A. Mid-IR Detectors InSb/HgCdTe sandwich detector, photoconductive (PC)/photovoltaic (PV) HgCdTe and QWIPs present mid-infrared capability in the 3 – 15 µm wavelength range. InSb/HgCdTe dual band detector has been fabricated at Teledyne Judson Technologies with high detectivity (>1010 cm-sqrt (Hz)/W)11. Broadband photoconductive and

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Evaluation of low dark current InSb photovoltaic detectors

1. INTRODUCTION InSb p+-n junctions are widely used as i.r. photovoltaic detectors for the 3-5 jtm range. The reverse dark current of the detector is very important for modern thermal image applications. Therefore a high-quality p ''-n photovoltaic detector with low dark current is a basic requirement[1].

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InSb photovoltaic detector P5968-100 | Hamamatsu Photonics

The P5968-100 is a photovoltaic detector having high sensitivity in the so-called atmospheric window at 3 to 5 μm. Custom devices are also available to meet your special request.Features- Cooling hold time: 8 hours- Built-in preamp type available

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Status and Progress of Research on HgCdTe Photovoltaic Infrared Detectors

Materials used for infrared detectors in recent years are HgCdTe, InSb, InGaAs, Si:X, QWIP and InAs/GaSbT 2 SL, of which HgCdTe is a ternary compound, an alloy of CdTe and HgTe ratios [] is an ideal infrared detector material with a large adjustable range, and the forbidden band width can cover an energy range of 0.1–1.0eV with the change of material

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Influence of Different Passivation Films on the Performance of InSb

DOI: 10.3724/sp.j.7103116033 Corpus ID: 234633956; Influence of Different Passivation Films on the Performance of InSb Photovoltaic Detector @article{2020InfluenceOD, title={Influence of Different Passivation Films on the Performance of InSb Photovoltaic Detector}, author={ and and and and and and and and

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INSB-1000 (INSB) Detector Preamplifier

The INSB-1000 was specifically designed to operate with Photovoltaic Indium Antimonide detectors. The low noise and high gain aspects, together with a zero volt bias, provide an ideal complement to these detectors. The INSB-1000 preamplifier provides the InSb detector with all of the interface circuitry required for optimum operation.

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Free-Space InAsSb Amplified Detector

Thorlabs designs and manufactures components, instruments, and systems for the photonics industry. We provide a portfolio of over 22,000 stocked items, complimented by endless custom solutions enabled by vertical integration. Thorlabs is comprised of 22 wholly owned design and manufacturing entities across nine countries with a combined manufacturing footprint of

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InSb photovoltaic detectors P5968 series

InSb photovoltaic detectors P5968 series High-speed response low-noise photovoltaic detectors 1 Structure/Absolute maximum ratings Type no. Window material*1 Package Cooling Active area (mm) Number of element Absolute maximum ratings Reverse voltage VR (V) Operating temperature Topr*2 (°C) Storage temperature

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What sizes can a Judson InSb detector be used for?

Custom Detectors: InSb detectors in any size up to 7mm diameter and in any configuration can be provided on a custom basis. Contact Judson for specifications for linear position sensors, quad cells, and two-color (sandwich) detectors.

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InSb photovoltaic detector P5968-300 | Hamamatsu Photonics

The P5968-300 is a photovoltaic detector having high sensitivity in the so-called atmospheric window at 3 to 5 μm. Custom devices are also available to meet your special request.Features- Cooling hold time: 8 hours- Built-in preamp type available

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What is a p5968 photovoltaic detector?

The P5968 series are photovoltaic detectors having high sensitivity in the so-called atmospheric window at 3 to 5 μm. Custom devices are also available to meet your special requests. Cooling hold time: 12 hours or more (at the time of shipment) Built-in preamp type available Built-in preamp allows high precision photometry.

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Photoconductive and Photovoltaic IR Detectors | SpringerLink

The photoconductivity and photovoltaic effect-based devices are the most widely exploited photon detectors of the infrared (IR) radiation. As we already know from the previous chapters, photon detectors have significant advantages over other technologies in the field of detecting IR radiation such as fast response, high sensitivity, and wavelength selectivity.

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InAs/InAsSb Photovoltaic Detectors

Photovoltaic detectors (photodiodes) in which the semiconductor layer is made of InAs or InAsSb materials. Absorbed photons produce charge carriers that are collected at the ciodes have complex current voltage characteristics.

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InSb photovoltaic detectors | Hamamatsu Photonics

High-speed, low-noise infrared detectors that deliver high sensitivity in the atmospheric window between 3 - 5 μm. Infrared light in the 5 μm band can be detected with peak sensitivity and

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Related documents | InSb photovoltaic detectors

Application note / CO₂ Measurement by InAsSb photovoltaic detectors and Mid infrared LEDs [18.3 MB/PDF] Usage notes Precautions / Compound opto-semiconductors (photosensors, light emitters) [300 KB/PDF]

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InfraRed Associates, Inc. Infrared Detectors & Accessories

9 rows· InSb Detectors. The photovoltaic Indium Antimonide detectors offered by InfraRed Associates, Inc. are p-n junctions formed by mesa techniques using single crystal material.

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Strain‐induced current leakage in InSb photovoltaic detectors

Gate‐controlled diode devices have been used to study the influence of external strain on the current leakage of InSb p+/n photovoltaic infrared detectors. Equivalence between external strain and the gate electrode in their effect on the current‐voltage (I‐V) characteristic has been empirically confirmed. By introducing an explicit analytical relationship between the applied

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J10D SERIES TELEDYNE JUDSON TECHNOLOGIES

J10D series InSb detectors are photovoltaic and generate a current proportional to the intensity of the photons absorbed. For maximum detectivity these detectors are operated at zero volt bias.

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Characteristics Of InSb Photovoltaic Detectors At 77K And Below

Indium antimonide photovoltaic detector parameters which are critical to the design of high-performance focal planes have been measured and are reported. Detector capacitances as a function of voltage, area and temperature are presented and the data is shown to agree well with the abrupt junction model. Resistance-area products as a function of temperature have also

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Indium Antimonides

InSb photovoltaic detectors are sensitive from ≈1 to 5.5 μm and must operate at cryogenic temperatures (≈80 K); they are typically packaged with a dewar for liquid-nitrogen cooling. MCT detectors (photovoltaic or photoconductive) can be sufficiently cooled thermo-electrically providing for a more portable and less cumbersome package that

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Indium Antimonide Detectors

J10D Series detectors are high quality Indium Antimonide (InSb)photodiodes, providing excellent performance in the 1 to 5.5 µm wavelength region. Single crystal p–n junction technology yields high speed, low noise detectors with

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Gas analysis using infrared (IR) detectors

Sensitive up to 5.5 µm, indium antimonide (InSb) photovoltaic detectors can be used to detect gases below the 5 µm wavelength band. All of our InSb detectors are cooled with liquid nitrogen. Thermopile detectors. Our thermopiles have a spectral range of 3-20 micron,

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Selection guide / Infrared detectors

InSb photovoltaic detector · High sensitivity in the 3 to 5 µm band makes it suitable for analysis of gases such as CO2, SOx. · FTIR · Gas measurement · Radiation thermometers · Flame detection InAsSb photovoltaic detector · High-speed response, high sensitivity, and high reliability infrared detectors in the 5 µm, 8 µm, or 10 µm band

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Indium Antimonide (InSb) Photovoltaic Detectors

Indium Antimonide (InSb) photodiodes provide excellent performance in the 1 to 5.5 µm wavelength region. Single crystal p–n junction technology allows for high-speed, low-noise detectors with superb uniformity, linearity, and stability.

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Indium Antimonide (InSb) Photovoltaic Detectors

Indium Antimonide (InSb) Photovoltaic Detectors | InSb photodiodes provide excellent performance in the 1.0 to 5.5µm wavelength region. Single crystal p–n junction technology yields high-speed

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About Insb photovoltaic detector

About Insb photovoltaic detector

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