About Energy storage surface treatment
The utilization of AgNbO3 film in dielectric energy storage poses challenges due to its susceptibility to impurity phase formation, which compromises its antiferroelectric properties and breakdown electric field.
Film dielectric capacitors have a wide application prospect in advanced pulse power supply and.
2.1. Materials preparationThe without plasma treated (WPT) film and plasma treated (PT) AgNbO3 film were fabricated on substrates of Pt (111)/Ti/SiO2/Si (.
Fig. 2(a) - (d) show the contact angles of WPT and PT substrate of Pt(111)/Ti/SiO2/Si(100), WPT AgNbO3 film and PT AgNbO3 film, respectively. The contact angle of.
The AgNbO3 film was successfully fabricated on substrate of Pt(111)/Ti/SiO2/Si (100) by combining oxygen ion surface plasma treatment and sol-gel method. The favorable antiferr.
Yunpeng Zhou: Conceptualization, Methodology, Resources, Software, Investigation, Formal analysis, Writing – review & editing. Zhehong Tang: Conceptualizatio.
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